PART |
Description |
Maker |
AFT05MS006N AFT05MS006NT1 |
High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET
|
NXP Semiconductors
|
MRFE6VP61K25HR6 MRFE6VP61K25HSR6 |
RF Power Field Effect Transistors High Ruggedness N--Channel Enhancement--Mode
|
Freescale Semiconductor, Inc
|
STH360N4F6-2 |
High avalanche ruggedness N-channel 40 V, 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package
|
STMicroelectronics ST Microelectronics
|
IPA50R650CE |
Very high commutation ruggedness
|
Infineon Technologies A...
|
STL8N6LF6AG |
High avalanche ruggedness
|
STMicroelectronics
|
STL220N3LLH7 |
High avalanche ruggedness
|
STMicroelectronics
|
STP100N6F7 |
High avalanche ruggedness
|
STMicroelectronics
|
STW65N65DM2AG |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
STH170N8F7-2 |
High avalanche ruggedness
|
STMicroelectronics
|